Eur. Phys. J. B 35, 41-47 (2003)
https://doi.org/10.1140/epjb/e2003-00254-8

Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure

¹ CCAST (World Laboratory), P.O. Box 8730, Beijing 100080, P.R. China
² Department of Physics, Inner Mongolia University, Hohhot 010021, P.R. China
³ Department of Basic Sciences, Inner Mongolia Agricultural University, Hohhot 010018, P.R. China

Corresponding author: ^a zwyan@imau.edu.cn

Received: 12 June 2003
Published online: 22 September 2003

Abstract

A variational approach is used to study the surface states of electrons in a semi-infinite polar semiconductor under hydrostatic pressure. The effective Hamiltonian and the surface-state levels are derived including the effects of electron-optical phonon interaction and pressure. The numerical computation has been performed for the surface-state energies versus pressure for zinc-blende GaN, AlN, and InN. The results show that the effect of electron-optical phonon interaction lowers the surface-state energy. It is also found that the effect of electron-surface optical phonon interaction is much bigger than the effect of electron-half space longitudinal optical phonon interaction for surface-state levels. It indicates that the surface-state energies and the influence of electron-phonon interaction increase with pressure obviously.