https://doi.org/10.1140/epjb/e2003-00254-8
Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure
1
CCAST (World Laboratory), P.O. Box 8730, Beijing 100080, P.R. China
2
Department of Physics, Inner Mongolia University, Hohhot 010021, P.R. China
3
Department of Basic Sciences, Inner Mongolia Agricultural University,
Hohhot 010018, P.R. China
Corresponding author: a zwyan@imau.edu.cn
Received:
12
June
2003
Published online:
22
September
2003
A variational approach is used to study the surface states of electrons in a semi-infinite polar semiconductor under hydrostatic pressure. The effective Hamiltonian and the surface-state levels are derived including the effects of electron-optical phonon interaction and pressure. The numerical computation has been performed for the surface-state energies versus pressure for zinc-blende GaN, AlN, and InN. The results show that the effect of electron-optical phonon interaction lowers the surface-state energy. It is also found that the effect of electron-surface optical phonon interaction is much bigger than the effect of electron-half space longitudinal optical phonon interaction for surface-state levels. It indicates that the surface-state energies and the influence of electron-phonon interaction increase with pressure obviously.
PACS: 63.20.Kr – Phonon electron and phonon-phonon interactions / 71.38.-k – Polarons and electron-phonon interactions / 73.20.At – Surface states, band structure, electron density of states
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2003