https://doi.org/10.1140/epjb/e2004-00233-7
Room temperature metal–insulator transition in as grown (La1-xSrx)yMnO3 thin films deposited by molecular beam epitaxy
1
INFM “Coherentia” and INFM-UdR di Salerno Dipartimento di Fisica, Università di Salerno, Italy
2
INSTM, Laboratorio di Strutturistica Chimica, Dipartimento di Ingegneria Meccanica, Università di Brescia, Italy
Corresponding author: a aruta@sa.infn.it
Received:
12
March
2004
Revised:
6
June
2004
Published online:
3
August
2004
We have fabricated by an in situ process
(LaSr
MnO3 epitaxial thin films by Molecular Beam
Epitaxy using a low partial pressure (
torr) of O2+5% ozone. Reflected High Energy Electron Diffraction
analysis has been performed during the growth process to check the
structural properties of the films. The samples have not been subjected to
any in situ or ex situ post deposition annealing procedure. Thin films on
different substrates (SrTiO3, LaAlO3, NdGaO
and with
different thickness have been fabricated to compare the transport properties
and investigate the effects of the epitaxial strain. For compositions around
x=0.3, Metal-Insulator (MI) transitions at temperature as high as
K have been observed in thin films few nanometers thick.
Resistivity versus temperature curves measured on samples deposited in the
same run onto different substrates, have shown clear effects related to the
epitaxial strain. These results are very promising for a deeper
understanding of the physical mechanisms at work in manganites and in view
of the future fabrication of manganite-based heterostructures for electronic
applications.
PACS: 75.47.Lx – Manganites / 81.15.Hi – Molecular, atomic, ion, and chemical beam epitaxy
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2004