Temperature stable low loss ceramic dielectrics in (1-x)ZnAl2O4-xTiO2 system for microwave substrate applications
Ceramic Technology Division, Regional Research Laboratory, Trivandrum 695 019, India
2 Department of Electronics, Cochin University of Science and Technology, Cochin 682 022, India
Corresponding author: a firstname.lastname@example.org
Published online: 21 October 2004
The microwave dielectric properties of ZnAl2O4 spinels were investigated and their properties were tailored by adding different mole fractions of TiO2. The samples were synthesized using the mixed oxide route. The phase purity and crystal structure were identified using X-ray diffraction technique. The sintered specimens were characterized in the microwave frequency range (3–13 GHz). The ZnAl2O4 ceramics exhibited interesting dielectric properties (dielectric constant (, unloaded quality factor ( at 12.27 GHz and temperature coefficient of resonant frequency ( ppm/C). Addition of TiO2 into the spinel improved its properties and the approached zero for 0.83ZnAl2O4-0.17TiO2. This temperature compensated composition has excellent microwave dielectric properties (, at 10.075 GHz) which can be exploited for microwave substrate applications.
PACS: 72.80.Sk – Insulators / 77.22.-d – Dielectric properties of solids and liquids / 77.84.Dy – Niobates, titanates, tantalates, PZT ceramics, etc. / 77.84.Bw – Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2004