Eur. Phys. J. B 43, 3-9 (2005)
https://doi.org/10.1140/epjb/e2005-00021-y

Optoelectronic properties of zinc blende ZnSSe and ZnBeTe alloys

Unité de Recherche de Physique des Solides, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir, Tunisia

Corresponding author: ^a Hafedh.Belmabrouk@fsm.rnu.tn

Received: 15 May 2004
Revised: 15 August 2004
Published online: 11 February 2005

Abstract

The compositional dependence of the electronic band structure has been computed for zinc blende ZnS_xSe and ZnBe_xTe alloys with composition x ranging from 0 to 1. The empirical pseudo potential method with the virtual crystal approximation have been used. A particlar attention has been paid to the effect of alloy disorder on the electronic properties of the II-VI studied compounds. For this purpose, the compositional disorder is added to the virtual crystal approximation as an effective potential. Such correction approximates significantly our calculated values of the band gap bowing parameters to experimental ones. The ZnS_xSe gap energy shows a nonlinear behavior with strong bowing for low compositions of sulfur. The ZnBe_xTe compound, as it is known, can be direct or indirect semiconductor depending on its beryllium composition x. The electron effective mass and the refractive index have been investigated as well. Polynomial approximations are obtained for both the energy gap and the effective mass as functions of alloy composition at and X valleys.