https://doi.org/10.1140/epjb/e2005-00042-6
Strain-induced properties of epitaxial VOx thin films
University of Groningen, Materials Science Centre,
Nijenborgh 4, 9747 AG, Groningen, The Netherlands
Corresponding author: a d.rata@fz-juelich.de
Received:
30
August
2004
Published online:
25
February
2005
We have grown VOx thin films on different substrates
in order to investigate the influence of epitaxial strain on the
transport properties. We found that the electric conductivity is
much larger for films grown under compressive strain on SrTiO3
substrates, as compared to bulk material and VOx films grown
under tensile strain on MgO substrates. A clear crossover from
metallic to semiconducting behavior is observed when increasing
the oxygen content x. Apparently, the application of strain
induces a Mott-Hubbard insulator-to-metal transition in
VO
. The VOx/SrTiO3 films show an unexpected large
positive magnetoresistance effect at low temperatures, which is
not found in the VOx films grown under tensile strain on MgO or
on a substrate with a similar lattice parameter.
PACS: 68.55.-a – Thin film structure and morphology / 61.10.-i – X-ray diffraction and scattering / 73.50.-h – Electronic transport phenomena in thin films
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005
