https://doi.org/10.1140/epjb/e2005-00061-3
Polaron properties in ternary group-III nitride mixed crystals
1
CCAST (World Laboratory), P.O. BOX 8730, Beijing 100080, P.R. China and
College of Science, Inner Mongolia Agricultural University, Hohhot 010018,
P.R. China
2
Department of Physics, Inner Mongolia University, Hohhot 010021, P.R. China
Corresponding author: a zwyan@imau.edu.cn
Received:
22
October
2004
Revised:
10
December
2004
Published online:
15
March
2005
Polaron properties are studied in bulk wurtzite nitride ternary mixed
crystals AxBN (A, B = Al, Ga, In) with the use of a dielectric
continuum Fröhlich-like electron-phonon interaction Hamiltonian. The
polaronic self-trapping energy and effective mass are analytically derived
by taking the mixing properties of the LO and TO polarizations due to the
anisotropy effect into account in the mono-phonon approximation. The
numerical computation has been performed for the wurtzite ternary mixed
crystal materials InxGa
N, AlxGa
N, and
AlxIn
N as functions of the composition x. The results show that
the polaronic self-trapping energies in the wurtzite structures are bigger
than that in zinc-blende structures for the materials calculated. It is also
found that the structure anisotropy increases the electron-phonon
interaction in wurtizte nitride semiconductors. The results indicate that
the LO-like phonon influence on the polaronic self-trapping energy and
effective mass is dominant, and the anisotropy effect is obvious.
PACS: 63.20.Kr – Electron-phonon interaction / 71.38.-k – Polaron / 78.30.Fs – Semiconductor
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005