Eur. Phys. J. B 45, 129-136 (2005)
https://doi.org/10.1140/epjb/e2005-00171-x

Time-dependent transport properties in quantum well with thin inserted layer

¹ Department of Physics, and Key Laboratory of Atomic and Molecular Nanoscience, Tsinghua University, 100084, P.R. China
² Department of Physics, Yantai University, 264005, P.R. China

Corresponding author: ^a zhdai@ytu.edu.cn

Received: 12 October 2004
Revised: 17 January 2005
Published online: 16 June 2005

Abstract

We investigate the time-dependent transport properties of quantum well on the situation of nonlinear bias, where a thin potential well layer is inserted in the main quantum well. In our calculations, we consider the effects from all kinds of phonon interactions in the device. We find that the charge redistribution and electron motion in the whole structure play an important effect on the final current-voltage (I-V) curve. We also find an evident current hysteresis region and current high-frequency oscillation with time in this particular region. The results show that the inserted potential well layer can make the current hysteresis width narrower than that in the single quantum well structure, and it also damps the current oscillation. Due to the existence of the inserted layer, the plateau structure of I-V curve found in the single quantum well disappears.