https://doi.org/10.1140/epjb/e2005-00165-8
Frequency dependent electrical properties of nano-CdS/Ag junctions
Department of Physics, Tezpur University, P.O. Napaam, Assam-784 028, India
Corresponding author: a best@tezu.ernet.in
Received:
18
October
2004
Revised:
16
February
2005
Published online:
16
June
2005
Polymer embedded cadmium sulfide nanoparticles/quantum
dots were synthesized by a chemical route using polyvinyl alcohol (lmw) as
the desired matrix. In an attempt to measure the electrical properties of
nano-CdS/Ag samples, we propose that contribution from surface traps are
mainly responsible in determining the 
and 
characteristics in high
frequency ranges. To be specific, beyond 1.2 MHz, the carrier injection from
the trap centers of the embedded quantum dots is ensured by large current
establishment even at negative biasing condition of the junction. The
unexpected nonlinear signature of response is believed to be due to the
fact that while trying to follow very high signal frequency (at least
10-3 of recombination frequency), there is complete abruptness in
carrier trapping (charging) or/and detrapping (decay) in a given CdS
nanoparticle assembly. The frequency dependent unique role of the trap
carriers certainly find application in nanoelectronic devices at a desirable
frequency of operation.
PACS: 81.05.Dz – II-VI semiconductors / 82.45.Yz – Nanostructured materials in electrochemistry / 73.63.Kv – Quantum dots / 73.21.La – Quantum dots
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005
