https://doi.org/10.1140/epjb/e2005-00207-3
Investigations on structural, optical and electrical parameters of spray deposited ZnSe thin films with different substrate temperature
University of Gaziantep, Department of Engineering Physics, 27310-Gaziantep, Turkey
Corresponding author: a bedir@gantep.edu.tr
Received:
4
October
2004
Revised:
27
December
2004
Published online:
13
July
2005
ZnSe thin films have been deposited on high cleaned glass substrate by spray
pyrolysis technique within the glass substrate temperature range (400 C
to 450
C). The structural properties of ZnSe thin films have been
investigated by (XRD) X-ray diffraction techniques. The X-ray diffraction
spectra showed that ZnSe thin films are polycrystalline and have a cubic
(zinc blende) structure. The most preferential orientation is along the
(111) direction for all spray deposited ZnSe films together with
orientations in the (220) and (311) planes also being abundant. The film
thickness was determined by an interferometric method. The lattice
parameter, grain size, microstrain and dislocation densities were calculated
and correlated with the substrate temperature (
. The optical
properties of ZnSe thin films have been investigated by UV/VIS spectrometer
and the direct band gap values were found to be in the region of 2.65 eV to
2.70 eV. The electrical properties of ZnSe thin films have been investigated
using the Van der Pauw method and the high quality ZnSe thin films were
observed to develop at 430
C with a resistivity of
ohm cm, a conductivity of
(
cm)-1 and a hall
mobility of 0.53 cm2/Vsec.
PACS: 52.77.Fv – High-pressure, high-current plasmas (plasma spray, arc welding, etc.) / 68.55.Jk – Structure and morphology; thickness; crystalline orientation and texture / 78.66.Db – Elemental semiconductors and insulators / 07.78.+s – Electron, positron, and ion microscopes; electron diffractometers
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005