https://doi.org/10.1140/epjb/e2005-00233-1
Optimization of impurity profile for p-n-junction in heterostructures
1
Institute for Physics of Microstructures of RAS, GSP-105,
Nizhny Novgorod, 603950, Russia
2
INFM-CNR, and Dipartimento di Fisica e Tecnologie Relative, Group of Interdisciplinary Physics () ,
Università di Palermo, Viale delle Scienze,
pad. 18, 90128 Palermo, Italy
Corresponding authors: a elp@ipm.sci-nnov.ru - b spagnolo@unipa.it
Received:
10
November
2004
Revised:
2
May
2005
Published online:
8
August
2005
We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.
PACS: 73.40.Kp – III-V semiconductor-to-semiconductor contacts, p-n-junctions, and heterojunctions / 85.40.Ry – Impurity doping, diffusion and ion implantation technology
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005
