https://doi.org/10.1140/epjb/e2005-00317-x
Electrical and optical properties of vacuum deposited MnPc thin films
School of Pure and Applied Physics, Mahatma Gandhi University,
Kottayam-686560, Kerala, India
Corresponding author: a rajthinfilms@yahoo.co.in
Received:
24
February
2005
Revised:
22
May
2005
Published online:
11
October
2005
Sandwich and planar structures were fabricated using
manganese phthalocyanine (MnPc) as active layer and gold (Au) as electrodes
by thermal evaporation method. The permittivity ε of MnPc was determined from
the dependence of capacitance on film thickness. J-V
characteristics of Au/MnPc/Au structure at room temperature were performed.
Thermally generated hole concentration p0, hole
mobility , total trap concentration
Nt and depth of the trap level were estimated. The
activation energies of MnPc films were determined from the Arrhenius plots
of ln σ versus 1000/T. The absorption and reflectance spectra of MnPc thin film deposited at room
temperature were recorded in the spectral range 300–900 nm. The optical band
gap of MnPc thin film was determined from the
versus
graph. The optical constants n and k were found. The real and imaginary parts of the optical dielectric constant
and
were calculated.
PACS: 72.80.Le – Organic semiconductors / 73.61.-r – Electrical properties of specific thin films / 78.20.-e – Optical properties thin films
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005