Resonant modes in monolithic nitride pillar microcavities
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
2 Institute of Theoretical Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
Corresponding author: a firstname.lastname@example.org
Published online: 23 December 2005
GaN-based airpost pillar microcavities are realized by focused-ion beam etching starting from an all-epitaxially grown vertical-cavity surface-emitting laser structure. Pillar diameters below 1 μm are well controllable. The sidewalls are smooth and show a damaged surface layer of a thickness less than 2 nm only. Micro-photoluminescence measurements reveal the longitudinal and transversal mode spectra of the cavities in good agreement with theoretical calculations based on a vectorial transfer-matrix method.
PACS: 42.55.Sa – Microcavity and microdisk lasers / 78.55.Cr – III-V semiconductors / 42.55.Px – Semiconductor lasers; laser diodes
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005