Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems
Institute for Theoretical Physics, University of Bremen, 28334 Bremen, Germany
2 National Institute for Materials Physics, POB MG-7, Bucharest-Magurele, Romania
Corresponding author: a firstname.lastname@example.org
Published online: 17 February 2006
A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels.
PACS: 73.21.La – Quantum dots / 78.67.Hc – Quantum dots
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2006