Eur. Phys. J. B 49, 305-311 (2006)
https://doi.org/10.1140/epjb/e2006-00069-1

Influence of correlation and temperature on the electronic structure of bulk and thin film GdN

¹ Physikalisches Institut, Universität Bonn, Bonn, Germany
² Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam -, 603 102, India

Corresponding author: ^a smathi@igcar.ernet.in

Received: 16 July 2004
Revised: 4 July 2005
Published online: 10 March 2006

Abstract

The influence of correlation and temperature on the electronic structure of bulk and thin film GdN has been studied using the s-f model, which combines the one electron band structure with a many body procedure. The tight binding linear muffin tin orbital (TB-LMTO) method was used to obtain the one electron band structure of the system. The s-f exchange coupling constants for each band were obtained from the spin polarized band structure of the system using a mean field model. Correlation effects are found to be present in the system. However they are not sufficiently strong to cause a correlation induced splitting in the spectrum. Some bands of the thin films of GdN exhibit splitting at T=T_c and it is due to the combined effect of correlation and temperature. The conduction bands of both the bulk and the thin films of GdN exhibit a red shift with respect to temperature.