Eur. Phys. J. B 50, 371-378 (2006)
https://doi.org/10.1140/epjb/e2006-00157-2

Modeling the emission red-shift in amorphous semiconductors and in organic-inorganic hybrids using extended multiple trapping

¹ Departamento de Física, Universidade de Aveiro, 3810–, 193 Aveiro, Portugal
² CICECO, Universidade de Aveiro, 3810–, 193 Aveiro, Portugal

Corresponding author: ^a lcarlos@fis.ua.pt

Received: 27 October 2005
Revised: 6 December 2005
Published online: 5 May 2006

Abstract

A model of thermal relaxation within localized states based on the extended multiple trapping framework is used to describe the red-shift of the emission maximum intensity as the excitation energy decreases. The model is applied to amorphous hydrogenated silicon (a-Si:H) and to organic-inorganic hybrids systems giving values for the energy gap, E₀, (1.896–3.882 eV) and for the β (4.36–12.08 eV^-1) parameter that characterizes the experimental decay of the density of localized states within the gap consistent with those achieved by some other recombination models previously reported for a-Si:H.. The thermal relaxation within localized states model is more physically detailed incorporating radiative and non-radiative transition mechanism for carriers relaxing into localized states that are explicitly absent in the previously reported theoretical descriptions