Temperature dependence of photoluminescence in amorphous Si1-xCx:H films
Laboratoire de Physique de la Matière Condensée, CNRS-École Polytechnique, 91128 Palaiseau, France
Corresponding author: a Kamila.firstname.lastname@example.org
Revised: 29 March 2006
Published online: 31 May 2006
We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous silicon-carbon alloys a-Si1-xCx:H prepared by glow discharge in the low-power regime. The radiative recombination process, due to photocarriers trapped on band-edge states, is in competition with the thermal escape of the photocarriers into the mobility bands. The model gives a quantitative fit with experiment, without any adjustable parameter, provided the width of the band-edge distribution of states is taken as the width of the conduction band only (measured by “photo-induced infra-red spectroscopy”) and not as the Urbach energy, as it is usually assumed.
PACS: 72.20.Jv – Charge carriers: generation, recombination, lifetime, and trapping / 78.55.Qr – Amorphous materials; glasses and other disordered solids / 81.05.Gc – Amorphous semiconductors
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2006