https://doi.org/10.1140/epjb/e2006-00208-8
Core level spectroscopy and RHEED analysis of KGd0.95 Nd0.05(WO4)2 surface
1
Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia
2
Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia
3
Innovation Department, Institute of Geology and Mineralogy, SB RAS, Novosibirsk, 630090, Russia
4
Laboratory of Electron Microscopy and Submicron Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia
Corresponding authors: a atuchin@thermo.isp.nsc.ru - b kesler@isp.nsc.ru - c n_maklakova@mail.ru - d sheglov@thermo.isp.nsc.ru
Received:
25
October
2005
Revised:
12
January
2006
Published online:
1
June
2006
A study of the surface structure and electronic properties of (010) KGd0.95Nd0.05(WO4)2 (Nd:KGW) using RHEED analysis and XPS is presented. It is shown that Nd doping has a negligible effect on the core levels of the basic elements. A bombardment of the Nd:KGW crystal with 3-keV Ar ions results in surface amorphization accompanied by the generation of tungsten ions in lower valence states.
PACS: 33.60.Fy – X-ray photoelectron spectra / 61.66.Fn – Inorganic compounds / 82.80.Pv – Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2006
