Eur. Phys. J. B 52, 245-248 (2006)
https://doi.org/10.1140/epjb/e2006-00290-x

Influence of the electric characteristics of II–VI semiconductor material on the electroluminescence of lanthanide complex

¹ Institute of Optoelectronic Technology, Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Beijing, 100044, P.R. China
² Institute of Modern Catalysis, State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, P.R. China
³ Chemistry-Pharmacy College of Jiamusi University, Jiamusi, 154007, P.R. China

Corresponding authors: ^a zhang_fj@tom.com - ^b zhengxu@center.njtu.edu.cn

Received: 17 March 2006
Revised: 25 May 2006
Published online: 31 July 2006

Abstract

The organic-inorganic combined structural device (ITO/PVK:Eu/ZnS/Al) is fabricated based on layered optimization scheme. II–VI semiconductor material ZnS is acted as an electron function (transporting and acceleration) layer. The hot electrons which have been accelerated in the ZnS layer directly impact excitation europium ions through resonant energy transfer and then recombine with injected holes to form excitons in PVK or EuTTA₂(N-HPA)Phen. Europium (Eu) ions may also be excited by intramolecular energy transfer from ligands. There are two kinds of excitation mechanisms: impacted excitation and injected recombination for the combined structural device. The electroluminescence (EL) intensity of the combined structural device is strongly improved and reaches up to 381 cd/m² at 20 V compared with the pure organic structural device. It may be an effective method to improve the EL intensity of the lanthanide complex by using electric characteristics of inorganic semiconductor materials.