Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure
The American College, Madurai, 625002, India
2 School of Physics, Madurai-Kamaraj University, Madurai, 625021, India
Revised: 21 September 2006
Published online: 8 November 2006
Spin-dependent Floquet scattering theory is developed to investigate the photon-assisted spin-polarized electron transport through a semiconductor heterostructure in the presence of an external electric field. Spin-dependent Fano resonances and spin-polarized electron transport through a laser irradiated time-periodic non-magnetic heterostructure in the presence of Dresselhaus spin-orbit interaction and a gate-controlled Rashba spin-orbit interaction are investigated. The electric field due to laser along with the spin-orbit interactions help to get spin-dependent Fano resonances in the conductance, whereas the external bias can be appropriately adjusted to get a near 80% spin-polarized electron transmission through heterostructures. The resultant nature of the Floquet scattering depends on the relative strength of these two electric fields.
PACS: 85.75.Mm – Spin polarized resonant tunnel junctions / 72.20.-i – Conductivity phenomena in semiconductors and insulators / 73.40.Gk – Tunneling / 73.63.Hs – Quantum wells
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2006