https://doi.org/10.1140/epjb/e2007-00192-5
Formation of sharp metal-organic semiconductor interfaces: Ag and Sn on CuPc
1
IFW Dresden, 01069 Dresden, Germany
2
Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow Distr., 142432, Russia
3
Institute of Solid State Physics, TU Dresden, 01069 Dresden, Germany
4
TASC-INFM Laboratory, Area Science Park – Basovizza, 34012 Trieste, Italy
5
Dipartimento di Ingegneria dei Materiali ed Amb., Università di Modena e Reggio Emilia, Emilia, Italy
Corresponding author: a M.Knupfer@ifw-dresden.de
Received:
15
January
2007
Revised:
18
April
2007
Published online:
13
July
2007
A detailed investigation of the chemistry and electronic structure during the formation of the interfaces between thin films of the archetypal organic molecular semiconductor copper phthalocyanine (CuPc) and Ag or Sn deposited on it was performed using photoemission and near-edge X-ray absorption spectroscopies with synchrotron light. Our study demonstrates the formation of sharp, abrupt interfaces, a behavior which is of particular importance for applications in organic devices. Moreover, for Ag on CuPc we demonstrate that this interface is free from any reaction, whereas there is slight interface reaction for Sn/CuPc.
PACS: 61.10.Ht – X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc / 68.35.-p – Solid surfaces and solid-solid interfaces: Structure and energetics / 73.20.-r – Electron states at surfaces and interfaces
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2007
