Prediction of Γ-L and L-X crossovers in GaxAl1-xSb alloys by empirical pseudopotential method
Department of Physics, ML Sukhadia University, Udaipur, 313001, India
Corresponding author: a email@example.com
Revised: 22 August 2007
Published online: 5 October 2007
Using empirical pseudopotential method Γ-L crossover is found for the Ga0.74Al0.26Sb. The conduction band minimum is observed to switch at the (0.87, 0, 0) point for Ga0.51Al0.49Sb which shifts to the X point for Ga0.21Al0.79Sb and remains at X leading finally to indirect band gap in AlSb. Band structure calculations for a large number of alloys are performed and bowing parameters bX and bL are proposed for the EX and EL respectively. Our findings may serve as directive to select the materials in a range of composition to examine the bowing parameters and thereby effective mass experimentally for the GaxAl1-xSb alloys.
PACS: 71.15.Dx – Computational methodology / 71.20.-b – Electron density of states and band structure of crystalline solids / 71.22.+i – Electronic structure of liquid metals and semiconductors and their alloys / 71.55.Eq – III-V semiconductors
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2007