Stimulated Brillouin scattering in magnetized diffusive semiconductor plasmas
School of Studies in Physics, Vikram University, Ujjain -, 456010, India
Revised: 2 May 2007
Published online: 17 October 2007
Using the hydrodynamical model and following the coupled mode approach, detailed analytical investigation of stimulated Brillouin scattering is performed in an electrostrictive semiconductor. The total induced current density including diffusion current density and the effective Brillouin susceptibility are obtained under off-resonant laser irradiation. The analysis deals with the qualitative behaviour of the Brillouin gain and transmitted intensity with respect to excess doping concentration and magnetic field. Efforts are directed towards optimizing the doping level and magnetic field to achieve maximum Brillouin gain at pump intensities far below the optical damage threshold level. It is found that by immersing a moderately doped semiconductor in a sufficiently strong magnetic field in transverse direction, one can achieve resonant enhancement of Brillouin gain provided the generated acoustic mode lies in the dispersionless regime.
PACS: 72.30.+q – High-frequency effects; plasma effects / 77.65.Bn – Piezoelectric and electrostrictive constants / 42.65.An – Optical susceptibility, hyperpolarizability / 42.65.Es – Stimulated Brillouin and Rayleigh scattering
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2007