Eur. Phys. J. B 62, 15-18 (2008)
https://doi.org/10.1140/epjb/e2008-00111-4

Hydrodynamic simulation of electron transport in n-type Hg_0.8Cd_0.2Te

¹ Laboratory of semiconductor devices physics, University of Béchar, P.O. Box N°417, Béchar, 08000, Algeria
² Institut d'Électronique du Sud, UMR CNRS 5214, Université Montpellier II, c.c.084, place Bataillon, 34095 Montpellier Cedex 5, France

Corresponding author: ^a daoudimadz@yahoo.fr

Received: 3 February 2007
Revised: 8 February 2008
Published online: 19 March 2008

Abstract

A hydrodynamic approach based on concentration, velocity and energy conservation equations is developed and used for the simulation of the electron transport in bulk HgCdTe. Both transient and steady-state regimes are simulated using input parameters calculated with a Monte Carlo simulator. The model is validated through a comparison in excellent agreement with Monte Carlo results.