Magnetoresistance dependence on electrical contact geometry and field alignment in mesoscopic rectangular rings
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576, Singapore
Revised: 3 March 2008
Published online: 19 April 2008
We investigate the magnetoresistance (MR) responses in a ferromagnetic rectangular ring structure using a four-point probe technique. The measured MR curves are strongly dependent on the electrical contact geometries used. The associated MR characteristics are elucidated by a combination of micromagnetic simulations and resistor-network based model, and the MR contributions from different portions of the ring were studied quantitatively. The systematic angular MR measured at the ring corner further show that the locations of the domain wall nucleation are very sensitive to the field alignment.
PACS: 73.63.-b – Electronic transport in nanoscale materials and structures / 75.60.Jk – Magnetization reversal mechanisms
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2008