https://doi.org/10.1140/epjb/e2008-00214-x
Theory of intraband transition linewidths due to LO phonon scattering in triangular well based on the many body projection method
1
Department of Nano Medical Engineering, Pusan National University, Miryang, 627-706, Republic of Korea
2
Research Institute for Basic Science and Department of Physics, Cheju National University, Jeju, 690-756, Korea
3
Department of Physics, Kyungpook National University, Daegu, 702-701, Republic of Korea
Corresponding author: a sdchoi@knu.ac.kr
Received:
11
January
2008
Revised:
26
March
2008
Published online:
6
June
2008
Utilizing the state dependent projection technique, we derive a formula for intraband transition linewidths due to longitudinal optical phonon scattering for the electrons in a triangular potential well. We find for GaN that the absorption power is keenly affected by the screening in such a way that the power increases with the electron density. We also find that the linewidth increases with the temperature, but decreases with the electric field applied to the system.
PACS: 71.38.-k – Polarons and electron-phonon interactions / 72.10.-d – Theory of electronic transport; scattering mechanisms / 73.21.Fg – Quantum wells
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2008
