Eur. Phys. J. B 63, 199-204 (2008)
https://doi.org/10.1140/epjb/e2008-00235-5

Hall effect and negative magnetoresistance in thin crystals of NbSe₃

¹ Moscow Engineering-Physics Institute, 115409 Moscow, Russia
² Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009 Moscow, Russia
³ Institut NÉEL, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble, France

Corresponding author: ^a AASinchenko@mephi.ru

Received: 21 January 2008
Revised: 23 March 2008
Published online: 20 June 2008

Abstract

We have measured the Hall effect and the transverse magnetoresistance in NbSe₃ single crystals. In the liquid helium temperature range we observed an absolute negative magnetoresistance (NMR) — the value of the resistance under magnetic field being much lower than that at zero field — in NbSe₃ single crystals with a thickness less than 5 μm with the magnetic field oriented in the (b, c) plane. We show that this NMR effect is observed in the magnetic field range in which the Hall constant changes its sign. The results are qualitatively explained by the change of the surface scattering contribution to the magnetoconductance in the magnetic field range near the Hall voltage zero crossing.