Eur. Phys. J. B 64, 249-255 (2008)
https://doi.org/10.1140/epjb/e2008-00309-4

Ballistic transport in bilayer nano-graphite ribbons under gate and magnetic fields

¹ Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan
² Center for General Education, Tainan University of Technology, 710 Tainan, Taiwan

Corresponding author: ^a sjs@nuk.edu.tw

Received: 29 January 2008
Revised: 6 June 2008
Published online: 30 July 2008

Abstract

This study uses the tight-binding model to examine the ballistic transport of short and infinitely long bilayer nano-graphite ribbons for different stacked structures, AA and AB, under perpendicularly applied gate and magnetic fields. In the small bias region, the conduction of the AB-stacked ribbon is better than for the AA. Under a gate field with small bias, the AB-stacked ribbon exhibits a significant current peak at the zero gate field point, similar to the graphene ribbon. On the contrary, this current peak is not found in the AA-stacked case. Under a perpendicular magnetic field with small bias, the magnetoresistance ratio in both stacked graphene ribbons are proportional to the square of the magnetic field.