https://doi.org/10.1140/epjb/e2008-00309-4
Ballistic transport in bilayer nano-graphite ribbons under gate and magnetic fields
1
Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan
2
Center for General Education, Tainan University of Technology, 710 Tainan, Taiwan
Corresponding author: a sjs@nuk.edu.tw
Received:
29
January
2008
Revised:
6
June
2008
Published online:
30
July
2008
This study uses the tight-binding model to examine the ballistic transport of short and infinitely long bilayer nano-graphite ribbons for different stacked structures, AA and AB, under perpendicularly applied gate and magnetic fields. In the small bias region, the conduction of the AB-stacked ribbon is better than for the AA. Under a gate field with small bias, the AB-stacked ribbon exhibits a significant current peak at the zero gate field point, similar to the graphene ribbon. On the contrary, this current peak is not found in the AA-stacked case. Under a perpendicular magnetic field with small bias, the magnetoresistance ratio in both stacked graphene ribbons are proportional to the square of the magnetic field.
PACS: 73.23.Ad – Ballistic transport / 73.21.Ac – Multilayers / 73.43.Qt – Magnetoresistance
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2008