https://doi.org/10.1140/epjb/e2008-00290-x
Thermal cycles, interface chemistry and optical performance of Mg/SiC multilayers
1
UPMC Univ Paris 06, Laboratoire de Chimie Physique – Matière et Rayonnement, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
2
CNRS, UMR 7614, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
3
Institute of Precision Optical Engineering, Department of Physics, Tongji University, Shanghai 200092, P.R. China
4
Laboratoire Charles Fabry de l'Institut d'Optique, CNRS, Univ Paris-Sud, Campus Polytechnique, RD 128, 91127 Palaiseau Cedex, France
5
Laboratorio Nazionale TASC, INFM-CNR, s.s.14, km 163.5 in Area Science Park, 34012 Trieste, Italy
6
Dipartimento di Ingegneria dei Materiali e dellAmbiente, Universita di Modena e Reggio Emilia, Via Vignolese 905, 41100 Modena, Italy
Corresponding author: a philippe.jonnard@courriel.upmc.fr
Received:
4
February
2008
Revised:
19
June
2008
Published online:
18
July
2008
The interplay between optical performance and the thermally activated interface chemistry of periodic Mg/SiC multilayers designed for application at 30.4 nm are investigated by optical (hard X-ray, soft X-ray and ultraviolet ranges, i.e. from 0.154 to 30.4 nm) reflectivity and X-ray emission spectroscopy. The multilayers are prepared by magnetron sputtering and then annealed up to a temperature of 500 C. Two clear changes take place in the multilayer upon annealing. At first, between 200 and 300
C a strong decrease of the reflectivity is observed, due to the development of interfacial roughness following the crystallization of the Mg layers. No interfacial compound is detected. Then, between 350 and 400
C there is formation of the Mg2Si magnesium silicide at the interfaces following the reaction between the Mg and SiC layers. This also leads to the almost total loss of reflectivity of the multilayer. Thus, this kind of multilayer is thermally stable only for application requiring no heating above 200
C.
PACS: 68.65.Ac – Multilayers / 61.05.cm – X-ray reflectometry (surfaces, interfaces, films) / 78.70.En – X-ray emission spectra and fluorescence / 73.90.+f – Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures / 66.30.Ny – Chemical interdiffusion; diffusion barriers / 68.35.Fx – Diffusion; interface formation
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2008