Eur. Phys. J. B 65, 233-237 (2008)
https://doi.org/10.1140/epjb/e2008-00350-3

Scaling law of anomalous Hall effect in Fe/Cu bilayers

¹ Departement of Physics and Institute of Nanoscience & Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P.R. China
² Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China

Corresponding author: ^a phxxz@ust.hk

Received: 17 March 2008
Revised: 3 July 2008
Published online: 17 September 2008

Abstract

The scaling of anomalous Hall resistivity on longitudinal resistivity has been intensively studied in different magnetic systems, including multilayer and granular films, to examine whether a skew scattering or a side jump mechanism dominates in the origin of anomalous Hall effect (AHE). The scaling law is based on the premise that both resistivities are a consequence of electron scattering by the imperfections in the materials. By studying the anomalous Hall effect in the simple Fe/Cu bilayers, it was demonstrated that the measured anomalous Hall effect should not follow the scaling laws derived from skew scattering or side jump mechanism due to the short-circuit and shunting effects of the non-magnetic layers.