Eur. Phys. J. B 67, 51-56 (2009)
https://doi.org/10.1140/epjb/e2008-00466-4

Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots

¹ Laboratoire Pierre Aigrain, École Normale Supérieure, CNRS, 24 rue Lhomond, 75231 Paris Cedex 05, France
² Department of Mathematics, Physics, and Computer Science, University of La Verne, La Verne, California, 91750, USA
³ Grenoble High Magnetic Field Laboratory, CNRS/MPI, 25 avenue des Martyrs, 38042 Grenoble Cedex 9, France
⁴ Laboratoire de Photonique et Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France

Corresponding author: ^a vpreisler@ulv.edu

Received: 21 February 2008
Revised: 18 September 2008
Published online: 24 December 2008

Abstract

Resonant photoluminescence experiments performed on self-assembled InAs/GaAs quantum dots under strong magnetic field up to 28 T give rise to an accurate determination of the interband magneto-optical transitions. As this technique minimizes the effect of the homogeneous broadening of the transitions due to the size and composition fluctuations of the dots, the experimental spectra display well-defined peaks. A good agreement is found between the experimental data and calculations using an effective mass model including the coupling between the mixed exciton-LO phonon states. Transitions involving excitonic polarons are clearly identified. Moreover, a light-hole to conduction transition is also evidenced in agreement with previous theoretical predictions.