Disorder and localization of electrons in bilayer graphene
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 210093, Nanjing, P.R. China
Corresponding author: a firstname.lastname@example.org
Revised: 9 October 2008
Published online: 13 January 2009
We investigate localization behavior of electron states in bilayer graphene formed with the Bernal stacking in the presence of various types of disorder (site-energy, in-plane hopping and inter-plane hopping) by the use of the transfer matrix method. It is found that all the states are localized at various kinds of disorder (site-energy, in-plane hopping and inter-plane hopping) except that in the case of inter-plane-hopping disorder the states at the zero energy are critical. The implications of the results are discussed.
PACS: 72.80.Ng – Disordered solids / 73.63.-b – Electronic transport in nanoscale materials and structures / 81.05.Uw – Carbon, diamond, graphite / 73.23.-b – Electronic transport in mesoscopic systems
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2009