https://doi.org/10.1140/epjb/e2009-00011-1
Disorder and localization of electrons in bilayer graphene
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 210093, Nanjing, P.R. China
Corresponding author: a wangyixiang0406@gmail.com
Received:
23
June
2008
Revised:
9
October
2008
Published online:
13
January
2009
We investigate localization behavior of electron states in bilayer graphene formed with the Bernal stacking in the presence of various types of disorder (site-energy, in-plane hopping and inter-plane hopping) by the use of the transfer matrix method. It is found that all the states are localized at various kinds of disorder (site-energy, in-plane hopping and inter-plane hopping) except that in the case of inter-plane-hopping disorder the states at the zero energy are critical. The implications of the results are discussed.
PACS: 72.80.Ng – Disordered solids / 73.63.-b – Electronic transport in nanoscale materials and structures / 81.05.Uw – Carbon, diamond, graphite / 73.23.-b – Electronic transport in mesoscopic systems
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2009
