Eur. Phys. J. B 67, 139-148 (2009)
https://doi.org/10.1140/epjb/e2009-00020-0

Electronic properties close to Dirac cone in two-dimensional organic conductor α-(BEDT-TTF)₂I₃

¹ Department of Physics, Nagoya University, 464-8602, Nagoya, Japan
² Institute for Advanced Research, Nagoya University, 464-8602, Nagoya, Japan

Corresponding author: ^a katashin@slab.phys.nagoya-u.ac.jp

Received: 17 October 2008
Revised: 8 December 2008
Published online: 22 January 2009

Abstract

A zero-gap state (ZGS) has been found in a bulk system of two-dimensional organic conductor, α-(BEDT-TTF)₂I₃ salt which consists of four sites of donor molecules in a unit cell. In the present paper, the characteristic of the ZGS is analyzed in detail and the electronic properties are examined in the vicinity of the Dirac point where the conduction and valence bands degenerate to form the zero-gap. The eigenvectors of the energy band have four components of respective sites, where two of them correspond to inequivalent sites and the other two correspond to equivalent sites. It is shown that the former exhibits an exotic momentum dependence around the contact point and the latter shows almost a constant dependence. The density of states of each site close to the Dirac point is calculated to demonstrate the temperature dependence of the local magnetic susceptibility and the local nuclear magnetic relaxation rate. Further, the robust property of the ZGS against the anion potential is also shown by using the second-order perturbation.