Electron and hole effective masses in self-assembled quantum dots
Surface Physics Laboratory and Department of Physics, Fudan University, 200433, Shanghai, P.R. China
Corresponding author: a firstname.lastname@example.org
Published online: 18 March 2009
Electron and hole effective masses in self-assembled InAs/GaAs quantum dots are determined by fitting the energy levels calculated by a single-band model to those obtained by a more sophisticated tight-binding method. For the dots of various shapes and dimensions, the electron effective-mass is found to be much larger than that in the bulk and become anisotropic in the dots of large aspect ratio while the hole effective-mass becomes almost isotropic in the dots of small aspect ratio. For flat InAs/GaAs quantum dots, the most appropriate value for the electron and hole effective-mass is believed to be the electron effective-mass in bulk GaAs and the vertical heavy-hole effective-mass in bulk InAs, respectively.
PACS: 71.18.+y – Fermi surface: calculations and measurements; effective mass, g factor / 73.22.Dj – Single particle states / 73.21.La – Quantum dots
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2009