Kinetic effects on the transport properties of nanostructured devices investigated by deterministic solutions of the Boltzmann-Poisson system
Institute of Theoretical and Computational Physics, Graz University of Technology, Petersgasse 16, 8010 Graz, Austria
Corresponding author: a email@example.com
Published online: 5 May 2009
Deterministic numerical methods developed for solving Boltzmann-Poisson systems of carriers and phonons are applied to determine the transport properties of sub-micron semiconductor devices and bulk graphene. Kinetic effects on the far-from-equilibrium electron transport in a silicon npn-structure are studied by comparing the solution of the Boltzmann equation with corresponding maximum entropy distributions, which serve as reference for a hydrodynamical description. An indium phosphide n+-n-n+ diode is considered to investigate the impact of nonequilibrium polar optical phonons on the electron transport. Remarkable transport properties due to the exotic band structure of graphene are investigated on a kinetic level. The numerical studies based on a direct determination of the distribution functions of electrons and phonons demonstrate the significant influence of nonequilibrium phonons on the carrier transport in sub-micron electronic building blocks.
PACS: 72.20.Ht – High-field and nonlinear effects / 02.60.Nm – Integral and integrodifferential equations / 72.10.Di – Scattering by phonons, magnons, and other nonlocalized excitations
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2009