Charge Hall effect generated by spin-polarized current injected into Rashba spin orbit coupling media
Department of Physics, Southeast University, Nanjing, 211189, P.R. China
Corresponding author: a email@example.com
Revised: 27 July 2009
Published online: 11 September 2009
Using the Keldysh Green's function method, we study theoretically the electron accumulation induced by the inverse spin Hall effect in a spin valve structure in which a clean quantum wire formed from a 2D electron gas (2DEG) with Rashba/Dresselahaus spin orbit interaction (SOI) is connected to two ferromagnet electrodes. In a nonequilibrium situation when a spin current with an out-of plane (the 2DEG plane) spin polarization is driven through the SOI region by an external voltage, non-equilibrium electron accumulation or a Hall voltage forms at the two lateral sides of the quantum wire and exhibits an oscillation along the wire like the Rashba spin precession; the magnetization directions of FMs affect the Hall voltage and their parallel or antiparallel alignment along the normal direction of the 2DEG plane is most favorable to the Hall voltage. In an equilibrium situation, two planar magnetizations which are not collinear can generate an electron accumulation/a Hall voltage too. When one of the FM electrodes is replaced by a normal metal (NM), the electron accumulation is still present along the wire and its magnitude remains nearly unchanged in the biased case, whereas in the unbiased case it is reduced significantly and even vanishes.
PACS: 72.25.Dc – Spin polarized transport in semiconductors / 73.23.-b – Electronic transport in mesoscopic systems / 73.63.-b – Electronic transport in nanoscale materials and structures / 72.25.-b – Spin polarized transport
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2009