https://doi.org/10.1140/epjb/e2009-00406-x
First-principles study of Sr adsorption on InN (0001)
1
Nanjing National Laboratory of Microstructures, Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, 210093 Nanjing, P.R. China
2
Department of Physics, Zhengzhou Teachers College, Zhengzhou, 450044 Henan, P.R. China
3
College of Science, Nanjing University of Aeronautics and Astronautics, 210016 Nanjing, P.R. China
Corresponding author: xswu@nju.edu.cn
Received:
8
May
2009
Revised:
17
June
2009
Published online:
1
December
2009
Structures of Sr adsorbed on InN (0001) surfaces are theoretically investigated by first-principles calculations. The adsorption energies of Sr on InN (0001) decrease with decreasing Sr coverage. An InN (0001)-(2×2) surface structure covered by a 1/4 monolayer of Sr at the T4 sites may be the most energetically favourable. Sr atoms may substitute indium atoms, or accumulate at the voids inside InN films. The interstitial Sr defects may act as a potential source of compensation for the p-type behaviour of Sr-doped InN at the surface.
PACS: 68.35.bg – Semiconductors / 68.43.Bc – Ab initio calculations of adsorbate structure and reactions
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2009