https://doi.org/10.1140/epjb/e2009-00434-6
Scattering effects on the performance of carbon nanotube field effect transistor in a compact model
Institut TELECOM, TELECOM Paristhech, LTCI CNRS, 46 rue Barrault,
75013 Paris, France
Corresponding author: hamiehs@yahoo.fr
Received:
18
July
2009
Revised:
2
November
2009
Published online:
17
December
2009
Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator.
PACS: 73.63.Fg – Nanotubes / 87.85.Rs – Nanotechnologies-applications
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2009
