Eur. Phys. J. B 74, 463-466 (2010)
https://doi.org/10.1140/epjb/e2010-00124-4

Electronic structure of C co-doped (Ga, Fe)N-based diluted magnetic semiconductors

¹ Laboratoire de Magnétisme et de Physique des Hautes Énergies Département de Physique, B.P. 1014, Faculté des Sciences, Rabat, Morocco
² Institut Néel, MCMF, CNRS, B.P. 166, 38042 Grenoble Cedex, France
³ The Institute for Nanomaterials and Nanotechnology, INANOTECH, Rabat, Morocco
⁴ Hassan II Academy of Sciences and Technology, Rabat, Morocco
⁵ Laboratoire de Physique des Hautes Energies Département de physique, B.P. 1014, Faculté des Sciences, Rabat, Morocco

Corresponding author: elkenz@fsr.ac.ma

Received: 17 November 2009
Revised: 23 February 2010
Published online: 13 April 2010

Abstract

We report results of the study on GaN doped with Fe and co-doped with Carbon (C), for acceptors defect, making use of the spin-polarized relativistic Korringa-Kohn-Rostoker coherent-potential approximation method. In order to understand and to explain the half-metallicity and ferromagnetism stability, observed in Ga_0.95Fe_0.05N with acceptor defects, we calculated the electronic structure and magnetic properties of p-type Ga_0.95Fe_0.05N. Furthermore, comparison between the electronic structure of the substitutional and interstitial carbon in (Ga, Fe)N is also given. Mechanism of exchange interaction between magnetic ions in Ga_0.95Fe_0.05N with acceptor defect is investigated. The hyperfine interaction has been calculated for the disordered alloy systems Ga_0.95Fe_0.05N_1-xC_x (0.01 ≤ x ≤ 0.08).