Eur. Phys. J. B 75, 31-35 (2010)
https://doi.org/10.1140/epjb/e2010-00044-3

Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy

¹ Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, 739-8526, Higashi-Hiroshima, Japan
² Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, 739-0046, Higashi-Hiroshima, Japan
³ Department of Physics, Laboratory of Advanced Materials, and Surface Physics Laboratory (National Key Laboratory), Fudan University, 200433, Shanghai, P.R. China

Corresponding author: yemao1984@hiroshima-u.ac.jp

Received: 28 October 2009
Revised: 29 December 2009
Published online: 2 February 2010

Abstract

The edge properties of single layer graphene epitaxially grown on partially graphitized 4H-SiC(0001) surface have been investigated with scanning tunneling microscopy (STM). We directly observed the atomic-structure dependency of the super structures in the vicinity of armchair and zigzag edges due to the different kinds of symmetry-breaking at those two edges.