https://doi.org/10.1140/epjb/e2010-00044-3
Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy
1
Graduate School of Science, Hiroshima University, 1-3-1
Kagamiyama, 739-8526, Higashi-Hiroshima, Japan
2
Hiroshima
Synchrotron Radiation Center, Hiroshima University, 2-313
Kagamiyama, 739-0046, Higashi-Hiroshima, Japan
3
Department of
Physics, Laboratory of Advanced Materials, and Surface Physics
Laboratory (National Key Laboratory), Fudan University, 200433, Shanghai, P.R. China
Corresponding author: yemao1984@hiroshima-u.ac.jp
Received:
28
October
2009
Revised:
29
December
2009
Published online:
2
February
2010
The edge properties of single layer graphene epitaxially grown on partially graphitized 4H-SiC(0001) surface have been investigated with scanning tunneling microscopy (STM). We directly observed the atomic-structure dependency of the super structures in the vicinity of armchair and zigzag edges due to the different kinds of symmetry-breaking at those two edges.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2010