Eur. Phys. J. B 75, 237-245 (2010)
https://doi.org/10.1140/epjb/e2010-00137-y

Nonequilibrium electron and spin properties in a parallel double quantum dot Fano interference device

¹ Basic department, Shenyang University of Technology, 111003, Liaoyang, P.R. China
² College of Sciences, Northeastern University, 110004, Shenyang, P.R. China
³ International Centre for Materials Physics, Chinese Academy of Sciences, 110016, Shenyang, P.R. China

Corresponding author: weijianggong@gmail.com

Received: 5 November 2009
Revised: 23 March 2010
Published online: 6 May 2010

Abstract

Nonequilibrium electron and spin transport properties in a parallel double quantum dot (QD) Fano interferometer are theoretically studied. With the shift of gate voltage around the chemical potential of either lead, we find the Fano lineshapes in the differential conductance spectra, which is sensitively determined by the bias voltage strength and appropriate QD level distributions. The intradot Coulomb interactions modulate the Fano interference in a substantial way and can induce the emergence of negative differential conductance, because of its nontrivial role in splitting the QD levels. In the presence of a local Rashba spin-orbit coupling, the interplay between the magnetic and Rashba fields induces the occurrence of the nonequilibrium spin-related Fano interference, different from the linear-transport results. Furthermore, the striking Coulomb-driven spin accumulation in the 'resonant-channel' QD appears.