Eur. Phys. J. B 75, 527-530 (2010)
https://doi.org/10.1140/epjb/e2010-00167-5

Numerical study of localization in quantum spin hall state of HgTe/CdTe system

National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, P.R. China

Corresponding author: ^a wangyixiang0406@gmail.com

Received: 17 March 2010
Revised: 30 April 2010
Published online: 4 June 2010

Abstract

HgTe/CdTe quantum well has served as a new material in realizing the quantum spin Hall state. We investigate the localization and scaling behavior of electronic states in HgTe/CdTe quantum wells through the scaling analysis. A phase diagram where the boundary separating the localized and extended states is plotted in the parameter space which is spanned with disorder strength and Fermi energy. We also discuss the implications of these results on the behavior of topological insulator.