https://doi.org/10.1140/epjb/e2010-00167-5
Numerical study of localization in quantum spin hall state of HgTe/CdTe system
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, P.R. China
Corresponding author: a wangyixiang0406@gmail.com
Received:
17
March
2010
Revised:
30
April
2010
Published online:
4
June
2010
HgTe/CdTe quantum well has served as a new material in realizing the quantum spin Hall state. We investigate the localization and scaling behavior of electronic states in HgTe/CdTe quantum wells through the scaling analysis. A phase diagram where the boundary separating the localized and extended states is plotted in the parameter space which is spanned with disorder strength and Fermi energy. We also discuss the implications of these results on the behavior of topological insulator.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2010
