Eur. Phys. J. B 76, 475-480 (2010)
https://doi.org/10.1140/epjb/e2010-00232-1

Optical-controlled domain wall resistance in magnetic nanojunctions

¹ Department of Physics, G.C., Shahid Beheshti University, Evin, 19839-63113, Tehran, Iran
² Laser and Plasma Research Institute, G.C., Shahid Beheshti University, Evin, 19839-63113, Tehran, Iran
³ Department of Physics, Azarbaijan University of Tarbiat Moallem, 53714-161, Tabriz, Iran

Corresponding author: ^a teranchi@cc.sbu.ac.ir

Received: 23 February 2010
Revised: 19 May 2010
Published online: 3 August 2010

Abstract

Domain walls in ferromagnetic metals are known to be a source of resistance. In the present work resistance of a domain wall in a ferromagnetic nanojunction is investigated using the semiclassical approach. The analysis is based on the Boltzmann transport equation, within the relaxation time approximation. The one-dimensional Néel-type magnetic domain wall is considered and the effect of the electron-photon interaction on the resistance is studied. The results indicate that polarization and wavelength of the photon play a significant role in the magnetoresistance. The resistance of the nanojunction decreases as the wavelength of the photon increases. It is also shown that the domain wall resistance decreases by increasing the Fermi energy.