Eur. Phys. J. B 76, 421-425 (2010)
https://doi.org/10.1140/epjb/e2010-00181-7

Electronic transport for a crossed graphene nanoribbon junction with and without doping

¹ Department of Physics and Key Laboratory for Low-Dimensional Structures and Quantum Manipulation (Ministry of Education), Hunan Normal University, Changsha, 410081, P.R. China
² Department of Applied Physics, Hunan University, Changsha, 410082, P.R. China
³ International Center for Materials Physics, Chinese Academy of Sciences, Shenyang, 110015, P.R. China

Corresponding author: ^a ghzhou@hunnu.edu.cn

Received: 8 March 2010
Revised: 25 May 2010
Published online: 17 June 2010

Abstract

The electronic transport property for a crossed junction of graphene nanoribbons with and without impurity doping is investigated numerically by a fully self-consistent non-equilibrium Green's function method combined with density functional theory. It is demonstrated that the transport property of the junction depends sensitively on both the dopant positions and the geometry of junction. Specifically, the I-V characteristics of the junction with either nitrogen- or boron-doped stems always show metallic behavior. However, the current strongly depends on the doping atomic species and sites, but slightly depends on the geometry of junction under small bias voltage. The findings here may be important in the design of graphene-based electronic devices for realizing on/off states.