https://doi.org/10.1140/epjb/e2010-00271-6
Spin-fluctuation mediated high-temperature ferromagnetism in Si:Mn dilute magnetic semiconductors
1
RRC Kurchatov Institute, Kurchatov Sqr. 1, 123182 Moscow, Russia
2
SMC-INFM-CNR and Dipartimento di Fisica, Università di Roma
“La Sapienza”, piazzale Aldo Moro 2, 00185 Roma, Italy
Corresponding author: a sergio.caprara@romal.infn.it
Received:
10
June
2010
Published online:
22
September
2010
We discuss a possible route to explain high-temperature ferromagnetism
in Si:Mn dilute magnetic semiconductors. We argue that most Mn atoms are
segregated within nanometer-sized regions of magnetic precipitate and form
the alloy, or compound, MnSi2-z with z ≈ (0.250.30), whereas
a small minority of Mn atoms forms Ångström-sized magnetic defects
embedded in the host. Assuming that MnSi2-z is a weak itinerant ferromagnet
which supports sizable spin fluctuations (paramagnons) far above the
intrinsic Curie temperature, we show that the Stoner enhancement of the
exchange interaction between the local magnetic moments of the defects occurs. As
a result, a significant increase of the temperature of global
ferromagnetic order in the system is achieved. We develop a phenomenological
approach, to qualitatively describe this effect.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2010