Tunneling properties of hybrid magnetoelectric nanoscale devices

A. F. Klinskikh; P. A. Meleshenko; A. V. Dolgikh; D. A. Chechin

doi:10.1140/epjb/e2010-10478-0

EPJ

Tunneling properties of hybrid magnetoelectric nanoscale devices

A. F. Klinskikh, P. A. Meleshenko^a, A. V. Dolgikh and D. A. Chechin

Theoretical Physics Department, Voronezh State University, Universitetskaya sq.1, 394006 Voronezh, Russia

Received: 21 June 2010
Revised: 30 August 2010
Published online: 6 December 2010

Abstract

We present the simple model of a hybrid magnetoelectric nanoscale device which is based on the transfer matrix formalism. In the presented model the one-electron tunneling properties of such structures are analyzed in the ballistic regime. Spin selectivity was also investigated and found to be absent in these structures. The current-voltage characteristics as well as the dependencies of resistance on the magnetic field strength for described system are presented.