https://doi.org/10.1140/epjb/e2010-10478-0
Tunneling properties of hybrid magnetoelectric nanoscale devices
Theoretical Physics Department, Voronezh State University, Universitetskaya sq.1, 394006 Voronezh, Russia
Corresponding author: a melechp@yandex.ru
Received:
21
June
2010
Revised:
30
August
2010
Published online:
6
December
2010
We present the simple model of a hybrid magnetoelectric nanoscale device which is based on the transfer matrix formalism. In the presented model the one-electron tunneling properties of such structures are analyzed in the ballistic regime. Spin selectivity was also investigated and found to be absent in these structures. The current-voltage characteristics as well as the dependencies of resistance on the magnetic field strength for described system are presented.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2010