Tunneling properties of hybrid magnetoelectric nanoscale devices
Theoretical Physics Department, Voronezh State University, Universitetskaya sq.1, 394006 Voronezh, Russia
Corresponding author: a firstname.lastname@example.org
Revised: 30 August 2010
Published online: 6 December 2010
We present the simple model of a hybrid magnetoelectric nanoscale device which is based on the transfer matrix formalism. In the presented model the one-electron tunneling properties of such structures are analyzed in the ballistic regime. Spin selectivity was also investigated and found to be absent in these structures. The current-voltage characteristics as well as the dependencies of resistance on the magnetic field strength for described system are presented.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2010