Eur. Phys. J. B 80, 115-120 (2011)
https://doi.org/10.1140/epjb/e2011-10885-7

PGO models in the envelope function and effective mass approximations

Physics Department, West University of Timisoara, V Parvan 4, 300223, Timisoara, Romania

Corresponding author: ^a marius@physics.uvt.ro

Received: 17 November 2010
Revised: 24 January 2011
Published online: 4 March 2011

Abstract

A recipe to design quantum devices that exhibit the theoretical pseudo-Gaussian oscillator electronic states properties is given. The algorithm is described en detail and is illustrated by the computation of a Mn_xCd_1-xTe ternary alloy pseudo-Gaussian heterostructure. The numerical procedure reaches beyond of pseudo-Gaussian models and can be used for designing epitaxial growth devices with desired electronic states structure. The calculations are carried out in the envelope function and effective mass approximations.