PGO models in the envelope function and effective mass approximations
Physics Department, West University of Timisoara, V Parvan 4, 300223, Timisoara, Romania
Corresponding author: a firstname.lastname@example.org
Revised: 24 January 2011
Published online: 4 March 2011
A recipe to design quantum devices that exhibit the theoretical pseudo-Gaussian oscillator electronic states properties is given. The algorithm is described en detail and is illustrated by the computation of a MnxCd1-xTe ternary alloy pseudo-Gaussian heterostructure. The numerical procedure reaches beyond of pseudo-Gaussian models and can be used for designing epitaxial growth devices with desired electronic states structure. The calculations are carried out in the envelope function and effective mass approximations.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2011