Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation
Insight from molecular dynamics simulation on amorphous silicon re-growth
Institut d'Électronique, de Microélectronique et de Nanotechnologies, Département ISEN, Avenue Poincaré, Cité Scientifique, BP 60069, 59652 Villeneuve d'Ascq Cedex, France
Corresponding author: a firstname.lastname@example.org
Revised: 6 April 2011
Published online: 7 June 2011
The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoelectronic devices to solar cells, more knowledge of the mechanisms governing the migration of the silicon amorphous/crystalline interface and dopant diffusion during solid phase epitaxy is needed. In this work, silicon recrystallisation in the framework of solid phase epitaxy and the influence on orientation effects have been investigated at the atomic level using empirical molecular dynamics simulations. The morphology and the migration process of the interface has been observed to be highly dependent on the original inter-facial atomic structure. The  interface migration is a quasi-planar ideal process whereas the cases  and  are much more complex with a more diffuse interface. For , the interface migration corresponds to the formation and dissolution of nanofacets whereas for  a defective based bilayer reordering is the dominant re-growth process. The study of the interface velocity migration in the ideal case of defect free re-growth reveals no difference between  and  and a decrease by a mean factor of 1.43 for the case . Finally, the influence of boron atoms in the amorphous part on the interface migration velocity is also investigated in the case of  orientation.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2011