Electric field-induced rearrangement of charged species in metal oxide devices with resistive change: thermodynamic limitations
Karlsruhe Institute of Technology, Institute of Microstructure Technology, IMT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
2 Saratov State Technical University, Physics Department, Polytechnicheskaya 77, 410054 Saratov, Russia
Corresponding author: a firstname.lastname@example.org
Published online: 22 June 2011
Hypotheses used to interpret results of electrical measurements on metal oxides which are employed for gas sensors and resistive switching memristors are often based on consideration of drift migration of species (such as oxygen vacancies, chemisorbed ions) under electric field. We offer simple conceptual arguments restricting this approach from the view points of potential minimum principle, ambipolar diffusion and non-equilibrium thermodynamics (Glansdorff-Prigogine criterion).
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2011