Eur. Phys. J. B 82, 143-146 (2011)
https://doi.org/10.1140/epjb/e2011-20141-y

Interaction between stacking faults in pure Mg

¹ Key Laboratory of Low Dimensional Materials & Application Technology of Ministry of Education, Department of Physics, Xiangtan University, Hunan Province, Xiangtan, 411105, P.R. China
² School of Chemistry and Chemical Engineering, Guangxi University, Nanning, 530004, P.R. China
³ Light Alloy Net Forming National Engineering Research Center, School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai, 200030, P.R. China

Corresponding author: ^a tangbiyu@xtu.edu.cn

Received: 27 February 2011
Revised: 24 June 2011
Published online: 5 August 2011

Abstract

Interaction between stacking faults (SFs) in pure Mg has been studied using density functional theory. The present results show that strong interaction between SFs can be extended up to several close-packed atomic layers. Especially, the interaction energies increase and decrease alternatively with the increase of SFs separation. Two distinct interaction models between SFs are proposed based on shear characteristics of SFs with different numbers of separating layers. The calculated electronic structures further reveal the underlying interaction mechanisms.