https://doi.org/10.1140/epjb/e2011-20238-3
Investigation of optically generated kink effect in GaAs-based heterojunction phototransistors
1
Department of Electrical Engineering, Lahore University of
Management Sciences, Lahore Cantt, 54792, Pakistan
2
Microwave and Communication Systems Research Group, School of
Electrical and Electronic Engineering, The University of Manchester, Sackville street building, M60
1, QD Manchester, UK
Corresponding author: a hasan.abbas.khan@gmail.com
Received:
28
March
2011
Revised:
14
July
2011
Published online:
28
September
2011
An optically generated kink observed in the Gummel plot of AlGaAs/GaAs single heterojunction phototransistors (sHPTs) is reported when illuminated with relatively high optical powers. The observed sudden rise in collector current and decrease in the base current, referred to as `optical kink effect', is carefully studied and analyzed. The measurements are performed for incident optical power of up to 225 μW at an incident wavelength of 635 nm. This rise in the current gain of HPTs, in three terminal configuration, is associated with the base-collector space-charge modulation similar to the kirk effect.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2011
